Abstract
In this paper, a new methodology for modeling transistor mismatch in terms of systematic and random variations is proposed. The model is based on the variations in physical parameters. Although the methodology is the same, regardless of the technology used, the coefficients of the equations used in the model will vary due to the process. Results of the model, and a comparison between the proposed model and the well-known Pelgrom model are presented.
Keywords
Transistor
Computer science
Process (computing)
Transistor model
Statistical model
Semiconductor device modeling
Electronic engineering
Engineering
Electrical engineering
Artificial intelligence
Voltage
CMOS
Subject Areas
Analog and Mixed-Signal Circuit Design
·Biomedical Engineering ·Physical Sciences
VLSI and Analog Circuit Testing
·Hardware and Architecture ·Physical Sciences
Low-power high-performance VLSI design
·Electrical and Electronic Engineering ·Physical Sciences
Citations by Year
2013: 1
2014: 2
2016: 1
2020: 1
2021: 1
Loading…
Loading…