Journal Article

·2008

Annealing improvement on the localized states of plasma grown boron nitride film assessed through admittance measurements

Orhan Özdemi̇r YTU , Mustafa Anutgan , Tamila Aliyeva-Anutgan , İsmail Atılgan , Bayram Katırcıoğlu

Journal of Alloys and Compounds

No open-access abstract is available for this article. Use the DOI link on the right to read the full text.

Keywords

Boron nitride Materials science Annealing (glass) Plasma-enhanced chemical vapor deposition Thin film Analytical Chemistry (journal) Crystallite Chemical vapor deposition Fourier transform infrared spectroscopy Nitride Conductance Nanotechnology Chemical engineering Chemistry Composite material Condensed matter physics Metallurgy

Subject Areas

Semiconductor materials and devices ·Electrical and Electronic Engineering ·Physical Sciences
Boron and Carbon Nanomaterials Research ·Materials Chemistry ·Physical Sciences
GaN-based semiconductor devices and materials ·Condensed Matter Physics ·Physical Sciences

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