Abstract
This study compares different switching techniques for Silicon Carbide (SiC) MOSFET assisted Silicon (Si) IGBT based hybrid switch and presents the effect of hybrid switch control techniques on the efficiency improvement. The hybrid switch which parallels a IGBT with a SiC MOSFET is proposed as a solution to improve the light load efficiency. The hybrid switch combines desirable properties both IGBT and SiC MOSFET. Different operation modes of hybrid switch are analyzed in PSIM using a simple circuit and if is shown that the hybrid switch performs better compared to IGBT alone operation.
Keywords
Insulated-gate bipolar transistor
MOSFET
Silicon carbide
Materials science
Silicon
Electronic engineering
Switching time
Electrical engineering
Optoelectronics
Engineering
Voltage
Transistor
Subject Areas
Silicon Carbide Semiconductor Technologies
·Electrical and Electronic Engineering ·Physical Sciences
Multilevel Inverters and Converters
·Electrical and Electronic Engineering ·Physical Sciences
Advanced DC-DC Converters
·Electrical and Electronic Engineering ·Physical Sciences
Citations by Year
2017: 1
2018: 3
2019: 2
2020: 1
2021: 1
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