Effect of ion beam modifications on the surface and structural properties of β-FeSi2 thin films

Journal of Physics D Applied Physics

Abstract

We have investigated the effect of ion bombardment during and after deposition on the structure and surface properties of semiconducting β-FeSi2 thin films grown on n-Si(1 0 0) substrates at room temperature by unbalanced magnetron sputtering. The properties of β-FeSi2 thin films were characterized with field emission gun scanning electron microscopy, atomic force microscopy, x-ray diffraction analysis and Raman spectroscopy. Ion bombardment of the films after deposition resulted in grain size refinement and decreased the crystallinity of the films. However, ion bombardment during deposition increased the crystallinity and grain size of the coatings. These modifications induced by ion bombardment are also expected to affect the photovoltaic performance.

Keywords

Crystallinity Materials science Raman spectroscopy Thin film Scanning electron microscope Sputter deposition Deposition (geology) Analytical Chemistry (journal) Ion beam Grain size Field emission gun Ion Sputtering Nanotechnology Optics Composite material Chemistry

Subject Areas

Semiconductor materials and interfaces ·Atomic and Molecular Physics, and Optics ·Physical Sciences

Integrated Circuits and Semiconductor Failure Analysis ·Electrical and Electronic Engineering ·Physical Sciences

Silicon and Solar Cell Technologies ·Electrical and Electronic Engineering ·Physical Sciences

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Effect of ion beam modifications on the surface and structural properties of β-FeSi2 thin films

Abstract

Keywords

Subject Areas

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