Preprint

·2019

Electro-optical analysis of 30% InGaN/GaN MQW LED devices

Kutsal Bozkurt YTU , Orhan Özdemi̇r YTU , Neslihan Ayarcı Kuruoğlu YTU , Bandar Alshehri , Karim Dogheche , Quentin Gaimard , A. Ramdane , El Hadj Dogheche

HAL (Le Centre pour la Communication Scientifique Directe)

Abstract

International audience

Keywords

Optoelectronics Materials science Light-emitting diode Gallium nitride Wide-bandgap semiconductor Nanotechnology Layer (electronics)

Subject Areas

GaN-based semiconductor devices and materials ·Condensed Matter Physics ·Physical Sciences
Semiconductor Lasers and Optical Devices ·Electrical and Electronic Engineering ·Physical Sciences

OpenAlex SDG Match

SDGs auto-classified by OpenAlex (score ≥ 0.4 shown).

Affordable and clean energy 73%