Full flexible performance characterization of a feedback applied transistor with LNA applications

Abstract

Summary In this paper, the full flexible performance characterization of a transistor with series inductive/parallel capacitive feedback is carried out in terms of LNA applications. For this purpose, the input VSWR V in –maximum available gain G Tmax variations are constructed for a high technology low‐noise transistor that is subject to the required noise figure F req ( f ) ≥ F min ( f ) along the device's operation band depending on the feedback. These V in –G Tmax variations result in the application of a design chart that indicates which value of feedback can be applied within which region of the operation band with the improvable trade‐off between the V in and output VSWR V ou t for the Freq(f) ≥ Fmin(f) . Following this, the optimum trade‐off between V in and V out is made for the necessary operation frequency regions using the load impedance Z L as an instrument with the predetermined source impedance Z S . Finally, the LNA applications of a series inductive/parallel capacitive feedback applied transistor with the optimum V in , V out , and G T subject to Freq(f) ≥ Fmin(f) ≥ are also presented as distributed across the entire bandwidth in the different operation bands. It can be concluded that this rigorous work will enable a designer to utilize the entire operation frequency band of transistor through using only a single series inductive/parallel capacitive feedback for the LNA designs of Freq(f) ≥ Fmin(f) with the optimum trade‐offs among its performance measures.