Abstract
Three different chemical ratios of Pt x Co 1− x thin films were grown on p‐type native oxide Si (100) by Magneto Sputtering System with cosputtering technique at 350°C temperature to investigate electrical prosperities. X‐ray photoelectron spectroscopy analysis technique was used to specify chemical ratios of these films. The current‐voltage ( I-V ) measurements of metal‐semiconductor (MS) Schottky diodes were carried out at room temperature. From the I-V analysis of the samples, ideality factor ( n ), barrier height ( ϕ ), and contact resistance values were determined by using thermionic emission (TE) theory. Some important parameters such as barrier height, ideality factor, and serial resistance were calculated from the I-V characteristics based on thermionic emission mechanism. The ideality factors of the samples were not much greater than unity, and the serial resistances of the samples were also very low.