Influence of Au diffusion on structural, electrical and optical characteristics of CdTe thin films

Abstract

Diffusion of Au and its effects on structural, electrical and optical properties of CdTe films fabricated by the close-spaced sublimation technique have been investigated. Diffusion of Au was studied in the range 400–550 °C using energy dispersive x-ray fluorescence analysis. Au-doped and un-doped CdTe films were characterized by x-ray diffraction (XRD), electrical and optical absorption measurements. The temperature dependence of the diffusion coefficient of Au in CdTe films is described as D = 4.4 × 10−7exp(−0.54 eV/kT). The mechanism of Au diffusion in polycrystalline CdTe films is attributed to the fast migration of Au along grain boundaries with simultaneous penetration into grains and settling on Cd-vacancies. It is supposed that the weak influence of Au diffusion on XRD patterns of CdTe films can be explained by dispersal of Au atoms preferentially on Cd-vacancies owing to proximity of the covalent radius of Au and Cd. Au atoms, placed on Cd-vacancies (AuCd) during fast cooling from diffusion temperature to room temperature, show an acceptor behaviour with an energy level about of Ev + 0.2 eV. The nature of this level is discussed.