Abstract
Molybdenum diffusion in CuInSe 2 (CIS) films was investigated in the temperature range 240-520°C using the energy-dispersive X-ray (EDX) and resistivity techniques. CuInSe 2 thin films were deposited by single-source evaporation on glass and molybdenum-covered glass substrates. The temperature dependence of Mo diffusion coefficient is described by equation D=1.3×10 -8 exp (-0.53/kT). It is shown that the diffusion doping of p-type CIS by molybdenum is accompanied by the significant decrease of resistivity. The observed results of the diffusion and electrical measurements are attributed to migration of Mo in the polycrystalline CIS films by means of both along intergrain surfaces and into grains.
Keywords
Subject Areas
OpenAlex SDG Match
SDGs auto-classified by OpenAlex (score ≥ 0.4 shown).