Abstract
In this study, we conducted an exploration of the optimization of various parameters of a photodetector using SCAPS-1D simulation to enhance its overall performance. The photodetector structure was modified based on the structure proposed by N.I.M. Ibrahim et al. (AMPC, 14(04), 55–65 (2024) by changing the order of the hole transport layer (HTL) and electron transport layer (ETL). Through the optimization of layer thicknesses and doping concentrations, we significantly improved the photovoltaic parameters of our optimized structure (FTO/PFN/PBDB-T-2F/PEDOT/Ag). The optimized device exhibited VOC of 1.02V, JSC of 35.20 mA/cm², FF of 84.61%, and an overall efficiency of 30.40%. Additionally, the device demonstrated a high quantum efficiency (EQ) of over 99% and responsivity peaking at 0.65 A/W, covering a broad spectral region from 300 nm to 900 nm. The results indicate the critical role of meticulous optimization in developing high-performance photodetectors, providing valuable insights into the design and fabrication of devices with superior performance characteristics.