Abstract
Summary In this paper, the gain G T of a microwave transistor is expressed analytically in terms of the mismatchings ( V in ≥ 1, V out ≥ 1) at the ports, noise figure F ≥ F min and the [z]‐parameter and noise parameters. Firstly, because the input termination Z S determines the noise F ≥ F min , thus the input termination Z S is pre‐determined to lie on the tangent constant noise and available gain circles so that the maximum power delivery is ensured for the given noise. Then, a design configuration is constructed in the input impedance Z in ‐ plane covering the gain and the required input and output mismatch circles within the Unconditionally Stable Working Area for the predetermined input termination Z S . Finally, the compatible ( F ≥ F min , G T , V in ≥ 1, V out ≥ 1) quadrates for either required or optimum ( V in ≥ 1, V out ≥ 1) couples are obtained with their ( Z S , Z L ) couples from the analysis of the design configuration. Furthermore, a case study is also presented for the full flexible performance characterization of a selected microwave transistor. It can be concluded that the near future microwave transistor is expected to be identified by performance data base built by its compatible ( F ≥ F min , G T , V in ≥ 1, V out ≥ 1) quadrates and the ( Z S , Z L ) terminations within the device operation domain to overview all the possible low‐noise amplifier designs using the full device capacity. Copyright © 2015 John Wiley & Sons, Ltd.