Journal Article

·2005

Photostimulated Changes of Electrical Characteristics of Ag/CdTe Thin Film Structures

T. D. Dzhafaröv YTU , M. Caliskan YTU

MRS Proceedings

Abstract

Electrical, optical and structural properties of Ag/CdTe structures exposed to thermal (in dark) and photoannealing (under illumination) have been studied. The effective diffusion coefficie nt of Ag in CdTe films have been estimated from resistance versus duration of annealing curves. In the range of 280-420°C the effective coefficient of thermal diffusion (Dt) and photodiffusion (Dph) are described as Dt= 1.9x105exp (-1.60/kT) and Dph =8.7x103exp(-1.36/kT). The acceleration of Ag diffusion under illumination was tentatively attributed to photoionization of Ag increasing the interstitial flux of silver. Ag/CdTe structures exposed to annealing were characterized by X-ray diffraction (XRD), I-V, C-V, conductivity-temperature and optical transmission measurements. In XRD patterns of annealed Ag/CdTe structures, besides the intensive (111) peak of cubic CdTe, the weak peaks of Ag2Te phase are also present. The temperature dependence of conductivity of annealed Ag/CdTe structures showed the energy levels 0.13 eV.

Keywords

Materials science Cadmium telluride photovoltaics Annealing (glass) Analytical Chemistry (journal) Electrical resistivity and conductivity Activation energy Diffusion Atmospheric temperature range Optoelectronics Composite material Physical chemistry Chemistry Thermodynamics

Subject Areas

Chalcogenide Semiconductor Thin Films ·Electrical and Electronic Engineering ·Physical Sciences
Advanced Semiconductor Detectors and Materials ·Electrical and Electronic Engineering ·Physical Sciences
Advanced Thermoelectric Materials and Devices ·Materials Chemistry ·Physical Sciences