Journal Article

·2024 OPEN ACCESS

Physically‐Deposited Hole Transporters in Perovskite PV: NiOx Improved with Li/Mg Doping (Adv. Mater. Technol. 7/2024)

Salih Alper Akalın , Mustafa Erol YTU , Begüm Uzunbayır , Sibel Oğuzlar , Serdar Yıldırım , Fatma Pınar Gökdemir Choi YTU , Serap Güneş YTU , Uğur Deneb Menda YTU , Manuel J. Mendes

Advanced Materials Technologies

Abstract

Hole Transport Material In article number 2301760, Salih Alper Akalin and co-workers explore Li and Mg co-doped NiOx thin films physically deposited from developed sputtering targets obtained through cold isostatic pressing and sintering. Improvements in mobility and conductivity values are observed with Li and Mg doping, which contribute to enhanced PSC performance when used as an HTM layer in the glass-indium tin oxide/NiOx-based HTM/MAPbI3/phenyl butryic acid methyl ester bathocuproine/Ag architecture.

Keywords

Non-blocking I/O Doping Materials science Perovskite (structure) Transporter Optoelectronics Chemistry Crystallography Biochemistry Catalysis Gene

Subject Areas

Perovskite Materials and Applications ·Electrical and Electronic Engineering ·Physical Sciences
Advancements in Solid Oxide Fuel Cells ·Materials Chemistry ·Physical Sciences