Journal Article

·2007

Similar admittance behavior of amorphous silicon carbide and nitride dielectrics within the MIS structure

Orhan Özdemi̇r YTU , İsmail Atılgan , Bayram Katırcıogˇlu

Vacuum

No open-access abstract is available for this article. Use the DOI link on the right to read the full text.

Keywords

Biasing Materials science Capacitance Conductance Dielectric Admittance Silicon carbide Silicon nitride Activation energy Amorphous silicon Arrhenius plot Band bending Condensed matter physics Silicon Analytical Chemistry (journal) Optoelectronics Voltage Chemistry Crystalline silicon Electrical engineering Electrical impedance Electrode Physics Composite material

Subject Areas

Thin-Film Transistor Technologies ·Electrical and Electronic Engineering ·Physical Sciences
Semiconductor materials and devices ·Electrical and Electronic Engineering ·Physical Sciences
Silicon Nanostructures and Photoluminescence ·Materials Chemistry ·Physical Sciences

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