Simultaneously matched SiGe transistor RF mixer with high dynamic range

Abstract

An active mixer operating at 2.15 GHz which is based on the Gilbert Mixer topology is designed by using the transistors which are realized by using 0.25um SiGe technology. The symetrical driving circuit at the input is realized by using the CB(common base) and CE(common emitter) transistors which operate interactively. The passive capacitive voltage-series feed-forward circuit is applied to CB circuit and an almost perfect broadband matching is obtained at the input. Mixer is simulated with AWR software environment. 5V DC supply voltage is used, O IP3 of 22.4 dBm and the conversion Gain of 3 dB is obtained for the -2.5 dBm of LO power. The noise figure of the circuit is found as 11.75 dB.

Keywords

Transistor Electrical engineering Frequency mixer Materials science Noise figure Common emitter CMOS Voltage Optoelectronics Electronic engineering Heterojunction bipolar transistor Capacitive sensing Radio frequency Engineering Bipolar junction transistor Amplifier

Subject Areas

Radio Frequency Integrated Circuit Design ·Electrical and Electronic Engineering ·Physical Sciences

Electrostatic Discharge in Electronics ·Electrical and Electronic Engineering ·Physical Sciences

Energy Harvesting in Wireless Networks ·Electrical and Electronic Engineering ·Physical Sciences

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Simultaneously matched SiGe transistor RF mixer with high dynamic range

Abstract

Keywords

Subject Areas

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References (3)

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