Journal Article

·2009

Study of minority carrier injection phenomenon on Schottky and plasma deposited p–n junction diodes

Orhan Özdemi̇r YTU , Kıvanç Sel

Materials Science in Semiconductor Processing

No open-access abstract is available for this article. Use the DOI link on the right to read the full text.

Keywords

Ohmic contact Materials science Biasing Schottky diode Diode Capacitance Ambipolar diffusion Crystalline silicon Diffusion capacitance Analytical Chemistry (journal) Conductivity Schottky barrier Conductance Depletion region Optoelectronics Electrode Plasma Condensed matter physics Silicon Voltage Electrical engineering Semiconductor Physics Nanotechnology Chemistry

Subject Areas

Semiconductor materials and interfaces ·Atomic and Molecular Physics, and Optics ·Physical Sciences
Silicon and Solar Cell Technologies ·Electrical and Electronic Engineering ·Physical Sciences
Silicon Nanostructures and Photoluminescence ·Materials Chemistry ·Physical Sciences

Citations by Year

OpenAlex SDG Match

SDGs auto-classified by OpenAlex (score ≥ 0.4 shown).

Affordable and clean energy 64%

Related Articles

Other articles contributing to the same SDGs.

2026 · 1 citations

Combination and interpretation of differential Higgs boson production cross sections in proton-proton collisions at $$ \sqrt{s}=13 $$ TeV

Journal of High Energy Physics

2026 · 1 citations

High-precision measurement of the W boson mass with the CMS experiment

Nature

2026 · 1 citations

Discrete thermal analysis of a marine reboiler under transcritical pressure conditions

Applied Thermal Engineering

2026

Vector boson scattering and anomalous quartic couplings in final states with ℓνqq or ℓℓqq plus jets using proton-proton collisions at $$ \sqrt{s}=13 $$ TeV

Journal of High Energy Physics
All articles