Temperature Dependence of PECVD Grown Boron Nitride Film in MIS structure

Abstract

PECVD grown boron nitride (BN) film was investigated as dielectric film in the form of metal/insulator/p‐silicon (MIS) structures. AC admittance of MIS structure was measured as a function of dc gate bias voltages and frequencies (1–1000 kHz) of the superimposed ac bias voltage (10 mV). For each applied bias voltage (from accumulating to inverting bias regimes), temperature (T) dependence of both capacitance (Cm) and conductance (Gm/ω) were measured to investigate majority/minority carrier behavior under various frequencies (kHz–MHz) as parameters. Cm(Gm/ω)−T−ω measurements revealed that observed capacitance steps and conductance peaks were related to traps residing at the interface of insulator/semiconductor structure. On the other hand, surface band bending Ψs of silicon and activation energy (EA) deduced from the Arrhenius plot of the frequency vs. reciprocal temperature as a function of gate bias (VG) seemed linearly dependent, implying that EA reflected the surface band bending (Ψs) variation.

Keywords

Materials science Biasing Capacitance Plasma-enhanced chemical vapor deposition Silicon nitride Arrhenius plot Conductance Boron nitride Band bending Admittance DC bias Silicon Dielectric Optoelectronics Activation energy Voltage Condensed matter physics Electrical engineering Electrical impedance Chemistry Electrode Physics Composite material

Subject Areas

Semiconductor materials and interfaces ·Atomic and Molecular Physics, and Optics ·Physical Sciences

Semiconductor materials and devices ·Electrical and Electronic Engineering ·Physical Sciences

Thermal properties of materials ·Materials Chemistry ·Physical Sciences

OpenAlex SDG Match

SDGs auto-classified by OpenAlex (score ≥ 0.4 shown).

Affordable and clean energy 72%

Temperature Dependence of PECVD Grown Boron Nitride Film in MIS structure

Abstract

Keywords

Subject Areas

OpenAlex SDG Match

References (2)

Related Articles

Combination and interpretation of differential Higgs boson production cross sections in proton-proton collisions at $$ \sqrt{s}=13 $$ TeV

High-precision measurement of the W boson mass with the CMS experiment

Discrete thermal analysis of a marine reboiler under transcritical pressure conditions

Vector boson scattering and anomalous quartic couplings in final states with ℓνqq or ℓℓqq plus jets using proton-proton collisions at $$ \sqrt{s}=13 $$ TeV