Abstract
A series of undoped and p-doped a-SiC:H samples have been made in the framework of a research plan for obtaining high quality p-type window layers by "Plasma Enhanced Chemical Vapor Deposition (PECVD)" technique from the mixtures of silane ( SiH 4 ), methane ( CH 4 ) and diborane ( B 2 H 6 ) gases. For the optimization of the window layer, the dependence of the electrical (conductivity) and optical (band gap) properties due to altered ratios of methane and diborane gases were investigated. When the diborane gas ratio was changed from Y = 0.06 to Y = 0.24 with an increase of 0.06 steps at a constant of X = 0.948 methane gas ratio, the dark conductivity and optical band gap values changed from ~ 10 -19 (Ω· cm ) -1 to ~ 10 -10 (Ω· cm ) -1 and 2.542 eV to 2.178 eV, respectively, and between these values, the most appropriate layers can be selected.