Journal Article

·2010

Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique

Uğur Deneb Menda YTU , Orhan Özdemi̇r YTU , Beyhan Tatar YTU , Mustafa Ürgen YTU , Kubilay Kutlu YTU

Materials Science in Semiconductor Processing

No open-access abstract is available for this article. Use the DOI link on the right to read the full text.

Keywords

Homojunction Materials science Activation energy Depletion region Quantum tunnelling Capacitance Analytical Chemistry (journal) Diffusion capacitance Biasing Thermal conduction Diffusion Condensed matter physics Voltage Semiconductor Doping Optoelectronics Electrode Electrical engineering Physics Chemistry Thermodynamics Composite material

Subject Areas

Semiconductor materials and interfaces ·Atomic and Molecular Physics, and Optics ·Physical Sciences
Semiconductor materials and devices ·Electrical and Electronic Engineering ·Physical Sciences
Silicon and Solar Cell Technologies ·Electrical and Electronic Engineering ·Physical Sciences

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Affordable and clean energy 83%

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