Journal Article

·2025

Ultra-Low Power and Low-Leakage Subthreshold CMOS Neural Circuit Design

Muhammed Efdal Elkatmış YTU , Okan Zafer Batur , Burcu Erkmen YTU

Abstract

In this paper, we present a neural circuit structure that includes synapse and neuron circuits designed to mimic the behavior of a biological brain. The circuits are implemented with a 0.6 V supply voltage, operating in the subthreshold region to achieve high energy efficiency. The Leaky Integrate-and-Fire (LIF) neuron design achieves an energy consumption of only 375 fJ per spike, while the synapse circuit achieves biologically realistic time constants (on the order of tens of milliseconds) by utilizing small capacitors in the femtofarad range (200 fF). To mitigate leakage current, a key challenge in sub-micron CMOS technologies, we employ 130-nm UMC low-leakage transistors.

Keywords

Subthreshold conduction Ultra low power CMOS Low-power electronics Leakage (economics) Electrical engineering Leakage power Electronic engineering Materials science Optoelectronics Power (physics) Computer science Transistor Engineering Power consumption Voltage Physics

Subject Areas

Advanced Memory and Neural Computing ·Electrical and Electronic Engineering ·Physical Sciences
Neuroscience and Neural Engineering ·Cellular and Molecular Neuroscience ·Life Sciences
CCD and CMOS Imaging Sensors ·Electrical and Electronic Engineering ·Physical Sciences

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